High sensitivity microwave detection using a magnetic tunnel junction in the absence of an external applied magnetic field

摘要

In the absence of any external applied magnetic field, we have found that amagnetic tunnel junction (MTJ) can produce a significant output direct voltageunder microwave radiation at frequencies, which are far from the ferromagneticresonance condition, and this voltage signal can be increase by at least anorder of magnitude by applying a direct current bias. The enhancement of themicrowave detection can be explained by the nonlinear resistance/conductance ofthe MTJs. Our estimation suggests that optimized MTJs should achievesensitivities for non-resonant broadband microwave detection of about 5,000mV/mW.